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The SMUN2212T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a transistor with a monolithic bias network comprising two resistors: R1 and R2, both valued at 22 kOhms. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Packaged in the SC-59 (SOT-23) surface-mount format, it offers a maximum power dissipation of 230 mW. This component is qualified to AEC-Q101 standards for automotive applications.
Verify the complete part number includes the 'G' suffix, indicating lead-free and RoHS compliance. Confirm the package type matches the required SC-59 footprint. Ensure the specific resistor ratio aligns with the circuit design requirements before procurement.
Select this component when a compact solution for NPN switching is needed without external bias resistors. The 22 kOhm resistor values are fixed; verify they suit the drive current. Consider the 50 V rating against the maximum operating voltage. The SC-59 package is suitable for high-density surface mount designs.
This part belongs to the MUN22xx series of digital transistors from onsemi. These devices are designed to simplify bias networks by integrating resistors directly onto the silicon die alongside the transistor element. The series provides various resistor ratios to accommodate different input impedance requirements in digital logic applications.
The SMUN2212T1G is functionally equivalent to the MUN2212T1G. Other compatible parts within the same family include MMUN2212L and DTC1234Exx variants, provided the resistor values and polarity match the original design specifications.