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The SMUN5112DW1T1G is a dual NPN digital transistor manufactured by onsemi, housed in a SOT-363 (SC-88) surface-mount package with six terminals. It integrates two independent NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device supports a maximum collector current of 100 mA and withstands a collector-emitter voltage of 50 V. It features a minimum DC current gain (hFE) of 100 at specified test conditions and operates within a temperature range of -55°C to +150°C. The unit weighs approximately 6.2 mg and complies with AEC-Q100 automotive qualification standards.
Verify the complete part number including the suffix DW1T1G to ensure correct packaging and lead-free compliance. Confirm AEC-Q100 certification requirements if deploying in automotive environments. Check datasheet thermal resistance values for adequate heat dissipation in dense layouts. Ensure static-sensitive handling procedures are followed during storage and assembly.
Select this component when a dual NPN configuration with integrated biasing is required in a minimal footprint. Compare hFE specifications against load requirements to ensure sufficient drive capability. Verify that the 50V breakdown voltage exceeds the maximum circuit operating voltage. Consider the SOT-363 thermal characteristics for power dissipation limits in enclosed spaces.
This device belongs to the MUN51xx series of dual digital transistors from onsemi. It shares the same physical package and general electrical architecture as variants like SMUN5111 and SMUN5115, differing primarily in internal resistor ratios. The series is designed for high-volume consumer and industrial electronics requiring space-efficient switching solutions.
Direct substitutes include other MUN5112 variants from different manufacturers offering identical pinouts and electrical characteristics. Verify resistor tolerance and hFE ranges match original design specifications before substitution.