SMUN5113DW1T1G-M02

Overview

The SMUN5113DW1T1G-M02 is a dual PNP Bipolar Digital Transistor manufactured by onsemi. It integrates two NPN/PNP transistors with bias resistors in a single SOT-363 (SC-88) surface-mount package. The device supports a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 50 V. Key electrical parameters include a maximum power dissipation of 385 mW, a maximum operating temperature of +150 °C, and an input resistance of 47 kohm for each transistor channel. The component is AEC-Q100 qualified for automotive applications.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to replace discrete components and external resistor networks
• AEC-Q100 qualified for enhanced reliability in automotive electronic systems
• Compact SOT-363 surface-mount packaging designed for high-density circuit board layouts

Applications

• Automotive electronics requiring AEC-Q100 compliant signal switching
• General-purpose digital logic level shifting and switching circuits
• Embedded system interface control and driver stages

Procurement Notes

Verify the specific M02 suffix against the manufacturer's official documentation to confirm wafer fab process equivalence and die-related specifications. Ensure that the ordering suffix does not imply functional changes unless explicitly stated in the datasheet. Cross-reference the part number with authorized distributors to confirm availability and lead times prior to procurement.

Selection Notes

Select this component when a compact solution for dual PNP switching is required within automotive or industrial environments. The integrated bias network simplifies design complexity compared to discrete transistor arrangements. Consider the 47 kohm input resistance and 50 V voltage rating to ensure compatibility with the target circuit's drive conditions and load requirements.

Part Context

This device belongs to the MUN5113DW1 series of Bias Resistor Transistors (BRT). These digital transistors are engineered to replace a single device along with its external resistor bias network. The series provides a space-saving alternative to discrete BJT configurations while maintaining consistent performance characteristics for standard switching applications.

Replacement Considerations

The SMUN5113DW1T1G-M02 is equivalent to the wafer fab process SST. Designers should verify pinout compatibility and thermal characteristics when substituting with other dual PNP digital transistors from different manufacturers.