SMUN5113DW1T1G

SMUN5113DW1T1G

$0.23
  • Description:TRANS 2PNP PREBIAS 0.187W SOT363
  • Series:-

SKU:1aa1e911b9e1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.187W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:187mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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SMUN5113DW1T1G

Overview

The SMUN5113DW1T1G is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two PNP transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 Vdc. The device features a typical input resistance (R1) of 47 kΩ and a resistor ratio (R1/R2) of 1.0. Thermal characteristics specify a total device dissipation of 256 mW at 25°C when one junction is heated, and 385 mW when both are heated. The operating temperature range spans from -55°C to +150°C.

Feature Summary

  • Integrates dual PNP transistors with built-in bias resistors to replace discrete components
  • Reduces printed circuit board space and component count
  • Simplifies circuit design by eliminating external resistor networks
  • Compliant with RoHS standards and halogen-free

Applications

  • Automotive applications requiring AEC-Q101 qualification
  • General-purpose switching circuits
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix to confirm packaging details, as the SMUN5113DW1T1G designation corresponds to tape and reel shipping quantities. Confirm that the required automotive qualification status aligns with the 'S' or 'NSV' prefix variants if PPAP capability is necessary for the target application.

Selection Notes

Select this component when a compact solution for dual PNP switching is required. Ensure the 47 kΩ internal bias resistance matches the logic interface requirements. Verify that the 50 V collector-emitter voltage rating provides sufficient margin for the intended supply voltage and transient conditions.

Part Context

This part belongs to the MUN5113DW1 series of digital transistors. It shares the same functional architecture and electrical ratings as the MUN5113DW1T1G, differing primarily in manufacturing site or specific packaging configuration. The series is designed to consolidate multiple discrete components into a single surface-mount device.

Replacement Considerations

Direct replacements include the MUN5113DW1T1G. Other variants within the DTA144ED/D datasheet family, such as NSBA144EDXV6T1G (SOT-563), may serve as pin-compatible alternatives if package size adjustments are permissible.

SMUN5113DW1T1GSMUN5113DW1T1G
$0.23
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