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The SMUN5114DW1T1G is a dual pre-biased PNP digital transistor manufactured by onsemi. It integrates two independent PNP transistors with built-in bias resistors in a single SOT-363 (SC-88) surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Each transistor includes a base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 47 kOhms, resulting in a typical resistance ratio of 0.21. The component supports a minimum DC current gain (hFE) of 80 at 5 mA and 10 V. It operates within a temperature range of -55 °C to +150 °C and has a maximum power dissipation of 187 mW.
Verify the complete part number including the suffix 'DW1T1G' to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Check for AEC-Q100 qualification if automotive reliability standards are required for the specific application environment.
Select this component when a dual PNP solution with fixed bias ratios is needed to reduce external component count. Ensure the 10 kOhm input resistance aligns with the driving source impedance. Verify that the 187 mW power dissipation rating accommodates the thermal conditions of the final assembly without exceeding junction temperature limits.
This part belongs to the MUN5114 series of pre-biased transistors from onsemi. It serves as a direct replacement for older variants like the MUN5114DW1T1, offering updated manufacturing processes and compliance with modern environmental directives. The SOT-363 package allows for high-density PCB layouts compared to discrete resistor-transistor combinations.
The MUN5114DW1T1G is listed as a direct replacement for the obsolete MUN5114DW1T1. Verify pinout compatibility and electrical parameter equivalence before substitution.