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The SMUN5115DW1T1G is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two PNP transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector current of 100 mA, collector-base voltage of 50 Vdc, and collector-emitter voltage of 50 Vdc. The typical input resistor R1 is 10 kΩ. Thermal characteristics specify a total device dissipation of 250 mW when one junction is heated and 385 mW when both are heated at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and Pb-free marking requirements for the target application. Ensure the selected variant matches the required thermal dissipation ratings for the intended operating environment.
Select this component for applications needing dual PNP switching with integrated biasing in a compact SOT-363 footprint. Evaluate thermal resistance values based on whether one or both junctions will be active simultaneously. Ensure the 50 Vdc voltage ratings and 100 mA current limits align with the system's operational requirements.
This part belongs to the MUN5115DW1 series of dual PNP Bias Resistor Transistors. It is functionally equivalent to the DTA114TD series but packaged in SOT-363. The device is designed to simplify circuit layouts by eliminating external bias resistors, offering a compact solution for digital transistor applications.
Direct replacements within the same family include MUN5115DW1T1G. Other variants in the series may use different packages such as SOT-563 or SOT-963, which require verification of pin compatibility and thermal performance before substitution.