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The SMUN5116DW1T1G is a dual NPN digital transistor from onsemi, housed in an SC-88 (SOT-363) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA per element. Key electrical parameters include a minimum DC current gain (hFE) of 160 at specified test conditions. The unit operates within a temperature range of -55°C to +150°C and features AEC-Q100 qualification for automotive reliability standards.
Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before finalizing purchase orders. Confirm that the AEC-Q100 qualification status meets the specific project requirements. Ensure compatibility with standard SMD assembly processes for the SC-88 package type.
Select this component when a dual NPN configuration with integrated biasing is required in a compact footprint. Compare input resistance values and hFE specifications against alternative models if precise base drive currents are critical. Consider thermal dissipation limits relative to the ambient operating environment and board layout constraints.
This part belongs to the MUN5116 series of digital transistors manufactured by onsemi. It serves as a modern replacement for older discrete resistor-transistor combinations, offering improved consistency and reduced assembly complexity. The SC-88 package provides a small outline suitable for dense consumer and industrial electronics layouts.
Direct substitutes include other dual NPN digital transistors in SC-88 packages with matching 50V ratings and similar bias resistor values. Verify pinout compatibility and electrical parameter tolerances before swapping with competitor parts or legacy onsemi designs.