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The SMUN5211DW1T1G is a digital transistor manufactured by onsemi, featuring two NPN transistors with built-in bias resistors in a single SOT-363 (SC-88/SC70-6) surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes an internal base resistor of 47 kΩ and an emitter resistor of 47 kΩ, providing a typical resistance ratio of 1. It has a minimum DC current gain (hFE) of 160 at specified conditions and a maximum power dissipation of 256 mW. The component is qualified to AEC-Q100 standards for automotive applications and functions within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix and tape-and-reel quantity against official onsemi documentation before purchase. Confirm that the AEC-Q100 qualification aligns with target automotive or industrial requirements. Ensure compatibility with standard SMT assembly processes for the SOT-363 package. Check for any recent product change notices regarding manufacturing sites or materials.
Select this component when a dual NPN digital transistor with equal base and emitter resistor values is required. The 47 kΩ input resistance offers moderate drive capability. Consider the 50 V voltage rating and 100 mA current limit for load compatibility. Verify thermal management needs given the 256 mW power dissipation limit in the small outline package.
This part belongs to the MUN5211DW1 series of pre-biased bipolar transistors from onsemi. It is designed as a drop-in replacement for discrete resistor-transistor networks. The SOT-363 package provides a compact footprint compared to individual components. It is distinct from other MUN52xx variants which may feature different resistor ratios or configurations.
Direct substitutes include other MUN5211DW1 variants from onsemi. Cross-manufacturer equivalents should be verified for pinout compatibility, electrical parameters, and package dimensions. Ensure any replacement maintains the AEC-Q100 qualification if used in automotive contexts.