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The SMUN5213DW1T1G is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN transistors with monolithic bias resistor networks, replacing discrete components to reduce board space and system cost. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 256 mW at 25°C. The internal resistors are R1 = 47 kΩ and R2 = 47 kΩ, yielding a ratio of 1.0. DC current gain is typically 140 at 5 mA and 10 V.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and shipping quantities. Confirm that the selected variant meets all environmental compliance requirements, including lead-free and halogen-free specifications, before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated biasing is required to minimize footprint. Ensure the application voltage does not exceed the 50 Vdc collector-emitter rating and that the thermal dissipation limits within the SOT-363 package are respected under operating conditions.
This part belongs to the MUN5213DW1 series of dual Bias Resistor Transistors. It shares functional characteristics with other variants in the DTC144ED family but differs in package type and specific resistor values. The SMUN prefix indicates a specific manufacturing or qualification tier compared to the standard MUN designation.
Direct replacements include MUN5213DW1T1G and NSBC144EDXV6T1G, provided pin compatibility and electrical ratings match the design requirements. Verify package dimensions and thermal characteristics when substituting between SOT-363 and SOT-563 form factors.