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The SMUN5216DW1T1G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring an NPN transistor and a PNP transistor within a single SC-70-6 package. It integrates monolithic bias resistor networks to replace discrete components. Key electrical parameters include a maximum collector-emitter voltage of 50V for both transistors and a continuous collector current of 100mA. The device meets AEC-Q100 automotive qualification standards. Minimum DC current gain (hFE) is specified at 160. Operating temperature range spans from -55°C to +150°C.
Verify the exact suffix against official onsemi documentation to confirm pinout and electrical characteristics match the specific variant required. Confirm RoHS compliance status through the manufacturer's product data sheet. Ensure the ordering code aligns with the desired tape and reel packaging quantity for production integration.
Select this component when a complementary NPN and PNP pair with integrated biasing is needed in a small footprint. Verify that the 50V voltage rating and 100mA current capacity meet the circuit requirements. Check if the SC-70-6 package dimensions fit the PCB layout constraints compared to other BRT options.
This part belongs to the MUN5216DW1 series of dual Bias Resistor Transistors. It is designed to simplify designs by combining two transistors and their associated bias resistors into one package. This integration helps reduce assembly time and improves reliability by minimizing solder joints and passive components on the board.
Check for direct substitutes like the MUN5216DW1T1G without the G suffix if lead-free compliance is not critical. Compare pinouts carefully as some variants may have different internal configurations. Verify thermal performance and package compatibility before swapping.