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The SMUN5216DW1T1G is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and DC current gain ranging from 160 to 350 at 5 mA. The input resistors are typically 4.7 kΩ, with a maximum value of 6.1 kΩ. Total device dissipation is 256 mW at 25°C for one junction heated.
Verify the specific ordering suffix and package type against the manufacturer's current documentation before procurement. Confirm that the device meets all required automotive qualification standards if applicable. Ensure compatibility with existing PCB footprints for the SOT-363 package. Check for any discontinuation notices or recommended replacements for new designs.
Select this component when a dual NPN digital transistor with integrated bias resistors is needed. Consider the 4.7 kΩ typical input resistance and 50 V voltage rating for circuit compatibility. Evaluate thermal dissipation requirements based on the operating ambient temperature and junction heating conditions. Verify package availability and lead times for production needs.
This part belongs to the MUN5216DW1 series of dual NPN Bias Resistor Transistors. It is designed to simplify circuit design by integrating transistors and bias resistors. The series includes variants like NSBC143TDXV6 in SOT-563 packages. These devices are intended for applications requiring reduced component count and board space.
Direct replacement options within the same family include other MUN5216DW1 variants. Consult the manufacturer's datasheet for discontinued devices and recommended alternatives. Ensure pinout and electrical characteristics match the original design requirements.