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The SMUN5230DW1T1G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-363 (SC-88) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Each transistor features a typical input resistance of 1 kOhm with a resistor ratio of 1. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 187 mW. The component is AEC-Q100 qualified for automotive applications.
Verify the specific ordering suffix against official documentation to ensure correct packaging and qualification status. Confirm that the required quantity aligns with standard reel sizes or cut tape availability. Check for any recent product change notices regarding pinout or electrical characteristics before finalizing procurement orders.
Select this component when a dual NPN switch with fixed bias ratios is required. Ensure the 1 kOhm input resistance matches the driving source impedance. Verify that the 50 V voltage rating exceeds the maximum circuit operating voltage. Consider the SOT-363 footprint constraints during PCB layout planning.
This part belongs to the MUN5230DW1 series of digital transistors from onsemi. It is functionally related to the MUN5230DW1T1G variant, sharing identical electrical specifications but potentially differing in packaging or qualification details. The series is designed for high-volume consumer and automotive electronics requiring compact switching solutions.
The MUN5230DW1T1G is a direct functional equivalent with identical electrical parameters. Verify package compatibility and lead availability before substitution.