SMUN5235DW1T1G

Overview

The SMUN5235DW1T1G is a dual NPN digital transistor array manufactured by onsemi, housed in a SOT-363 (SC-88) surface-mount package. It integrates two NPN transistors with built-in biasing resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 80. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 187 mW.

Feature Summary

• Dual NPN configuration with integrated base and emitter resistors for simplified switching applications
• High thermal stability supporting operation up to +150°C junction temperature
• Compact SOT-363 packaging designed for high-density surface-mount assembly

Applications

• General-purpose switching circuits in consumer electronics
• Driver stages for low-current loads in portable devices
• Logic level translation and buffer interfaces in embedded systems

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS directives and check for AEC-Q101 automotive qualification if required for the target application. Confirm availability through authorized distributors as lead times may vary based on production schedules.

Selection Notes

Select this component when a dual NPN switch with fixed biasing is needed to minimize board space. Compare the 2.2 kOhm input resistance against other MUN523x series variants if different drive currents are required. Ensure the 50 V voltage rating exceeds the maximum circuit voltage and verify that the 100 mA current limit meets load requirements.

Part Context

This part belongs to the MUN5235DW1 series of pre-biased transistors from onsemi. It is functionally related to other dual NPN arrays in the same family, such as the MUN5233DW1T1G and MUN5234DW1T1G, which differ primarily in their internal resistor values. The SOT-363 package is standard for compact dual-transistor solutions in modern electronics.

Replacement Considerations

Potential substitutes include the MUN5233DW1T1G and MUN5234DW1T1G from onsemi, provided the internal resistor ratios match the circuit design requirements. Other manufacturers offering SOT-363 dual NPN digital transistors with similar 50 V/100 mA ratings may also be considered after verifying pinout compatibility and electrical parameters.