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The SMUN5235DW1T3G is a dual NPN digital transistor manufactured by onsemi, housed in a surface-mount SOT-363-6 package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 187 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific suffix 'T3G' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-363 footprints during PCB layout. Cross-reference datasheet revisions to validate thermal characteristics and pinout assignments before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated biasing is required in a minimal footprint. Compare the 2.2 kOhm input resistance against other MUN523x series variants if different base drive currents are needed. Confirm that the 50 V voltage rating meets the system's maximum signal levels.
This part belongs to the MUN5235DW1 family of digital transistors from onsemi. It shares the same internal schematic and electrical characteristics as the MUN5235DW1T1G variant, differing primarily in packaging format. The SOT-363 package allows for high-density mounting on printed circuit boards compared to larger discrete transistor arrangements.
MUN5235DW1T1G is a confirmed equivalent part number with identical electrical specifications. Verify that the alternative packaging type aligns with assembly requirements.