SMUN5235DW1T3G

SMUN5235DW1T3G

$0.23
  • Description:TRANS 2NPN PREBIAS 0.187W SOT363
  • Series:-

SKU:e8de7cc16d94 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.187W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:187mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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SMUN5235DW1T3G

Overview

The SMUN5235DW1T3G is a dual NPN digital transistor manufactured by onsemi, housed in a surface-mount SOT-363-6 package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 187 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with pre-biased resistors for simplified switching applications
  • Optimized for low-power consumption within a compact six-pin surface-mount footprint
  • Designed for high reliability across extended industrial temperature ranges

Applications

  • General-purpose switching circuits
  • Driver interfaces for logic-level control
  • Level shifting between different voltage domains

Procurement Notes

Verify the specific suffix 'T3G' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-363 footprints during PCB layout. Cross-reference datasheet revisions to validate thermal characteristics and pinout assignments before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a minimal footprint. Compare the 2.2 kOhm input resistance against other MUN523x series variants if different base drive currents are needed. Confirm that the 50 V voltage rating meets the system's maximum signal levels.

Part Context

This part belongs to the MUN5235DW1 family of digital transistors from onsemi. It shares the same internal schematic and electrical characteristics as the MUN5235DW1T1G variant, differing primarily in packaging format. The SOT-363 package allows for high-density mounting on printed circuit boards compared to larger discrete transistor arrangements.

Replacement Considerations

MUN5235DW1T1G is a confirmed equivalent part number with identical electrical specifications. Verify that the alternative packaging type aligns with assembly requirements.

SMUN5235DW1T3GSMUN5235DW1T3G
$0.23
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