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The SMUN5311DW1T2G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP digital transistor with monolithic bias resistor networks in a single SOT-363 package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA for both devices. The typical input resistance is 10 kOhms with a typical resistor ratio of 1. Total device power dissipation is rated at 187 mW under standard conditions. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging configuration. The T2G suffix typically indicates reel packaging, distinct from the T1G cut tape variant. Confirm RoHS compliance status and automotive qualification requirements directly with the manufacturer's datasheet before procurement.
Select this component when a complementary NPN/PNP pair with fixed 10 kOhm base resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the SOT-363 footprint aligns with the PCB layout constraints compared to alternative packages.
This part belongs to the MUN5311DW1 series of dual BRTs. It shares the same electrical characteristics as the MUN5311DW1T1G but differs in packaging format. The series is designed to reduce component count and simplify assembly in compact electronic designs.
MUN5311DW1T1G offers identical electrical specifications in a cut-tape package. NSVMUN5312DW1T2G provides similar dual BRT functionality but with different resistor values (22 kOhm). Verify pinout compatibility and resistor ratios when substituting.