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The SMUN5311DW1T3G is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 surface-mount package. It integrates one NPN and one PNP silicon transistor with monolithic bias resistor networks. Key electrical ratings include a maximum collector-emitter voltage of 50 V and a maximum DC collector current of 100 mA per device. The unit features a total power dissipation of 256 mW at 25°C ambient temperature and operates up to +150°C. Each transistor includes a series base resistor and a base-emitter resistor, typically 10 kΩ each.
Verify the specific suffix 'T3G' against official manufacturer documentation to confirm tape and reel specifications. Ensure compatibility with existing footprint designs for the SOT-363 package. Confirm that the integrated resistor values meet the target circuit requirements before finalizing procurement.
Select this component when a complementary pair of digital transistors is required in a small form factor. The SOT-363 package supports high-density layouts. Verify that the 50 V rating and 100 mA current capacity align with the load conditions. Check if the standard 10 kΩ internal resistors provide appropriate base drive for the application.
This part belongs to the MUN5311 family of dual Bias Resistor Transistors produced by onsemi. These devices are designed to replace individual transistors and their associated external resistor networks. The family offers various configurations within the SOT-363 package to suit different impedance and switching needs.
Direct substitutes include the SMUN5311DW1T1G and SMUN5311DW1T5G from onsemi, which share identical electrical characteristics and pinout. Cross-manufacturer equivalents such as the LMUN5311DW1T1G from LRC may also be compatible provided pin assignments and electrical limits match.