SMUN5311DW1T3G

SMUN5311DW1T3G

$0.27
  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-

SKU:c166af37e892 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:187mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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SMUN5311DW1T3G

Overview

The SMUN5311DW1T3G is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 surface-mount package. It integrates one NPN and one PNP silicon transistor with monolithic bias resistor networks. Key electrical ratings include a maximum collector-emitter voltage of 50 V and a maximum DC collector current of 100 mA per device. The unit features a total power dissipation of 256 mW at 25°C ambient temperature and operates up to +150°C. Each transistor includes a series base resistor and a base-emitter resistor, typically 10 kΩ each.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors into a single compact package
  • Reduces printed circuit board space requirements by eliminating external discrete biasing components
  • Simplifies circuit design through integrated monolithic bias network for both channels

Applications

  • Low-power surface mount applications requiring minimal board space
  • General-purpose switching circuits utilizing complementary logic levels
  • Interface circuits replacing multiple discrete components

Procurement Notes

Verify the specific suffix 'T3G' against official manufacturer documentation to confirm tape and reel specifications. Ensure compatibility with existing footprint designs for the SOT-363 package. Confirm that the integrated resistor values meet the target circuit requirements before finalizing procurement.

Selection Notes

Select this component when a complementary pair of digital transistors is required in a small form factor. The SOT-363 package supports high-density layouts. Verify that the 50 V rating and 100 mA current capacity align with the load conditions. Check if the standard 10 kΩ internal resistors provide appropriate base drive for the application.

Part Context

This part belongs to the MUN5311 family of dual Bias Resistor Transistors produced by onsemi. These devices are designed to replace individual transistors and their associated external resistor networks. The family offers various configurations within the SOT-363 package to suit different impedance and switching needs.

Replacement Considerations

Direct substitutes include the SMUN5311DW1T1G and SMUN5311DW1T5G from onsemi, which share identical electrical characteristics and pinout. Cross-manufacturer equivalents such as the LMUN5311DW1T1G from LRC may also be compatible provided pin assignments and electrical limits match.

SMUN5311DW1T3GSMUN5311DW1T3G
$0.27
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