SMUN5313DW1T1G

Overview

The SMUN5313DW1T1G is a complementary Bias Resistor Transistor (BRT) from onsemi, featuring integrated NPN and PNP transistors with monolithic bias resistor networks. Packaged in SOT-363, it replaces discrete devices and external resistors to reduce board space and component count. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and typical input resistors of 47 kOhms. The device operates within a junction temperature range of -55°C to +150°C and meets RoHS compliance standards.

Feature Summary

• Integrates NPN and PNP transistors with monolithic bias resistor networks to simplify circuit design
• Reduces board space and component count by replacing single devices and external resistor bias networks
• Qualified for automotive applications under AEC-Q101 standards and capable of PPAP submission

Applications

• Automotive systems requiring unique site and control change requirements
• General-purpose digital switching circuits
• Low-power surface mount applications where board space is limited

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the 'S' prefix indicates qualification for automotive applications requiring unique site and control change requirements. Ensure compatibility with RoHS and halogen-free material specifications before procurement.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a compact SOT-363 package. Consider the thermal characteristics, specifically total device dissipation and junction-to-ambient resistance, relative to the expected operating ambient temperature and pad configuration. Verify that the 47 kOhm input resistor values align with the target logic interface requirements.

Part Context

This part belongs to the MUN5313DW1 series of complementary Bias Resistor Transistors. It shares functional similarities with other BRTs in the family but is distinguished by its specific NPN/PNP configuration and integrated resistor network. The 'SMUN' prefix denotes automotive-grade qualification, differentiating it from standard commercial variants.

Replacement Considerations

Direct replacements include the MUN5313DW1T1G for non-automotive contexts or NSBC144EPDXV6T1G for SOT-563 packaging. Verify pinout compatibility and thermal dissipation capabilities when substituting across different package styles such as SOT-963.

FAQ

What is the function of the 'S' prefix in the SMUN5313DW1T1G part number?

The 'S' prefix indicates that the device is qualified for automotive and other applications requiring unique site and control change requirements, and it is AEC-Q101 qualified.

How does the BRT architecture differ from discrete transistor designs?

The BRT integrates a single transistor with a monolithic bias network consisting of two resistors (series base and base-emitter), eliminating the need for individual external components.

What are the maximum ratings for collector-base and collector-emitter voltages?

Both the Collector-Base Voltage (VCBO) and Collector-Emitter Voltage (VCEO) have a maximum rating of 50 Vdc.