SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SMUN5313DW1T3G is a complementary Bias Resistor Transistor (BRT) from onsemi, featuring one NPN and one PNP transistor with monolithic bias resistor networks. It integrates two resistors per transistor into a single device to replace discrete components. The unit operates within a collector-emitter voltage of 50 Vdc and supports continuous collector currents up to 100 mAdc. Packaged in SOT-363, it offers a total device dissipation of 385 mW when both junctions are heated at 25 °C. The component includes an input forward voltage rating of 40 Vdc and functions across a junction temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix 'T3G' corresponds to the 10,000-unit tape and reel shipping format as documented in the official datasheet. Confirm that the device meets RoHS compliance and lead-free requirements for your manufacturing process. Ensure the selected package style matches the required pinout configuration for your PCB layout.
Select this component when a complementary pair of digital transistors is required in a compact SOT-363 footprint. The integrated 47 kOhm resistors eliminate the need for external biasing components. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the MUN5313DW1 series of complementary Bias Resistor Transistors. It shares the same internal electrical characteristics and pinout structure as the MUN5313DW1T1G, differing primarily in the shipping quantity and packaging format. The 'S' prefix indicates specific site and control change requirements suitable for automotive or specialized industrial applications.
MUN5313DW1T1G