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Product Detailed Parameters
- Description：TRANS PREBIAS 1NPN 1PNP 50V SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：187mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
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Overview
The SMUN5314DW1T1G is a dual digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor with built-in bias resistors in a SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device includes a typical input resistance of 10 kOhms and a resistor ratio of 0.21. With a power dissipation rating of 256mW and an operating temperature range from -55°C to +150°C, it is AEC-Q100 qualified for automotive applications.
Feature Summary
- Integrates complementary NPN and PNP transistors with monolithic bias resistor networks to reduce component count.
- AEC-Q100 qualified for automotive reliability standards.
- Designed for low-power surface mount applications requiring minimal board space.
Applications
- Automotive electronic circuits
- General-purpose switching applications
- Low-power digital logic interfaces
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and qualification levels. Confirm that the AEC-Q100 qualification aligns with project requirements. Check for any recent product change notices regarding assembly or material composition updates before finalizing procurement plans.
Selection Notes
Select this component when a dual configuration of NPN and PNP switches is required within a compact footprint. Ensure the 50V voltage rating and 100mA current capacity meet the circuit load requirements. Verify that the 10 kOhm base resistance provides appropriate drive characteristics for the intended control signals.
Part Context
This part belongs to the MUN5314DW1 series of digital transistors manufactured by onsemi. It is designed to replace discrete transistor and resistor combinations, simplifying circuit design. The SOT-363 package allows for high-density PCB layouts, making it suitable for modern compact electronic devices.
Replacement Considerations
The PUMD9-QZ from Nexperia is a documented alternative. Both are dual NPN/PNP pre-biased transistors in similar small packages. Verify pinout compatibility and exact resistance values before substitution.
