SMUN5335DW1T1G

SMUN5335DW1T1G

$0.23
  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-

SKU:7980f31ff135 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:187mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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SMUN5335DW1T1G

Overview

The SMUN5335DW1T1G is a dual bias resistor transistor from onsemi, featuring complementary NPN and PNP configurations within a single SOT-363 (SC-88) surface-mount package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage of 50 V. The device integrates built-in bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 0.047. It operates across a temperature range of -55 °C to +150 °C, with a power dissipation rating of 187 mW. This component is AEC-Q100 qualified for automotive applications.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors in a compact six-pin SOT-363 package.
  • AEC-Q100 qualified for automotive electronics reliability standards.
  • High junction temperature capability up to +150 °C for robust operation.

Applications

  • Automotive digital switching circuits
  • General-purpose logic level translation
  • Battery management system control interfaces

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging format and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices regarding material composition or manufacturing site changes before finalizing procurement orders.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The 2.2 kOhm input resistance suits direct interface with standard logic outputs. Confirm that the 187 mW power dissipation limit accommodates the thermal design constraints of the target application environment.

Part Context

This part belongs to the MUN5335DW1 series of dual bias resistor transistors manufactured by onsemi. It is functionally related to other variants in the same family, such as the MUN5335DW1T2G, which shares identical electrical characteristics but may differ in packaging configuration or reel specifications.

Replacement Considerations

The MUN5335DW1T2G is a confirmed alternative part number with identical electrical specifications. Verify pinout compatibility and thermal performance requirements before substitution.

SMUN5335DW1T1GSMUN5335DW1T1G
$0.23
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