SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SMUN5335DW1T1G is a dual bias resistor transistor from onsemi, featuring complementary NPN and PNP configurations within a single SOT-363 (SC-88) surface-mount package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage of 50 V. The device integrates built-in bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 0.047. It operates across a temperature range of -55 °C to +150 °C, with a power dissipation rating of 187 mW. This component is AEC-Q100 qualified for automotive applications.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging format and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices regarding material composition or manufacturing site changes before finalizing procurement orders.
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The 2.2 kOhm input resistance suits direct interface with standard logic outputs. Confirm that the 187 mW power dissipation limit accommodates the thermal design constraints of the target application environment.
This part belongs to the MUN5335DW1 series of dual bias resistor transistors manufactured by onsemi. It is functionally related to other variants in the same family, such as the MUN5335DW1T2G, which shares identical electrical characteristics but may differ in packaging configuration or reel specifications.
The MUN5335DW1T2G is a confirmed alternative part number with identical electrical specifications. Verify pinout compatibility and thermal performance requirements before substitution.