SMUN5335DW1T2G

SMUN5335DW1T2G

$0.23
  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-

SKU:0f54344ca51a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:187mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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SMUN5335DW1T2G

Overview

The SMUN5335DW1T2G is a dual digital transistor from onsemi, featuring one NPN and one PNP element within a SOT-363 (SC-88) surface-mount package. It supports a maximum continuous collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device integrates typical input resistors of 2.2 kOhms with a resistance ratio of 0.047. Power dissipation is rated at 187 mW, operating across a temperature range from -55 °C to +150 °C. The component provides a minimum DC current gain (hFE) of 80.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors for simplified circuit design.
  • Utilizes a compact six-pin SOT-363 package suitable for high-density surface-mount applications.

Applications

  • Switching circuits in portable consumer electronics
  • Driver stages for low-power loads in industrial control systems
  • Logic level translation interfaces

Procurement Notes

Verify the specific suffix 'T2G' against official documentation to confirm tape-and-reel packaging details. Ensure compatibility with standard SMT assembly processes for the SC-88 footprint. Cross-reference the manufacturer's latest datasheet for any updates regarding material declarations or compliance standards before finalizing procurement orders.

Selection Notes

Select this component when a complementary NPN/PNP pair is required in a minimal footprint. The integrated bias network reduces external component count compared to discrete transistor solutions. Verify that the 100 mA current limit and 50 V voltage rating align with the target application's electrical requirements.

Part Context

This part belongs to the MUN5335DW1 series of pre-biased digital transistors. It shares the same internal configuration as the SMUN5335DW1T1G but differs in packaging format. The series is designed to replace multiple discrete components, offering space savings and improved switching consistency in compact electronic designs.

Replacement Considerations

SMUN5335DW1T1G: Identical electrical specifications; verify packaging differences.

SMUN5335DW1T2GSMUN5335DW1T2G
$0.23
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