SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SMUN5335DW1T2G is a dual digital transistor from onsemi, featuring one NPN and one PNP element within a SOT-363 (SC-88) surface-mount package. It supports a maximum continuous collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device integrates typical input resistors of 2.2 kOhms with a resistance ratio of 0.047. Power dissipation is rated at 187 mW, operating across a temperature range from -55 °C to +150 °C. The component provides a minimum DC current gain (hFE) of 80.
Verify the specific suffix 'T2G' against official documentation to confirm tape-and-reel packaging details. Ensure compatibility with standard SMT assembly processes for the SC-88 footprint. Cross-reference the manufacturer's latest datasheet for any updates regarding material declarations or compliance standards before finalizing procurement orders.
Select this component when a complementary NPN/PNP pair is required in a minimal footprint. The integrated bias network reduces external component count compared to discrete transistor solutions. Verify that the 100 mA current limit and 50 V voltage rating align with the target application's electrical requirements.
This part belongs to the MUN5335DW1 series of pre-biased digital transistors. It shares the same internal configuration as the SMUN5335DW1T1G but differs in packaging format. The series is designed to replace multiple discrete components, offering space savings and improved switching consistency in compact electronic designs.
SMUN5335DW1T1G: Identical electrical specifications; verify packaging differences.