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The SN74CBT3383CDW is a 10-bit FET bus-exchange switch manufactured by Texas Instruments. It operates within a supply voltage range of 4 V to 5.5 V and supports data I/O signaling levels from 0 V to 5 V, including 0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V standards. The device features low on-state resistance (ron) with typical values of 3 Ω at 4.5 V and maximums up to 12 Ω depending on conditions. Propagation delay is minimal, typically 0.15 ns at 5 V. It includes active undershoot protection for off-isolation on A and B ports up to −2 V. The component is housed in a 24-pin SOIC package.
Verify the specific ordering suffix against the manufacturer's official Package Option Addendum to confirm the exact physical package type and shipping carrier configuration. Ensure that the selected variant matches the required thermal performance and moisture sensitivity level ratings for the intended manufacturing process. Confirm RoHS compliance status and lead finish specifications prior to final procurement decisions.
Select this component when designing systems requiring high-speed bus exchange or multiplexing capabilities with minimal signal distortion. The device is suitable for applications needing TTL-compatible control inputs and support for multiple voltage domains. Consider the thermal impedance characteristics of the SOIC package relative to the expected ambient operating temperature range and power dissipation requirements.
This part belongs to the SN74CBT3383C series of high-speed CMOS TTL-compatible bus switches. It is designed to provide low ON-state resistance and low input/output capacitance to minimize loading effects. The series supports both digital and analog applications, offering robust latch-up performance exceeding 100 mA per JESD 78, Class II standards.
SN74CBT3383CDWR
When the BE pin is low, the BX pin controls the data path. If BX is low, port A1 connects to port B1 and A2 to B2. If BX is high, port A1 connects to port B2 and A2 to B1, enabling byte swapping.
The Ioff feature ensures that damaging current will not backflow through the device when it is powered down, providing isolation during power-off states for partial-power-down applications.