SN74CBTD3306CD

Overview

The SN74CBTD3306CD is a dual FET bus switch from Texas Instruments featuring level shifting and -2 V undershoot protection. It operates within a supply voltage range of 4.5 V to 5.5 V and supports data I/O levels from 0 V to 5.5 V. The device contains two independent 1:1 switches in an 8-pin SOIC package. Key electrical parameters include a maximum on-resistance of 35 Ω, a maximum propagation delay of 0.25 ns at 5 V with 50 pF load, and output drive capabilities of ±128 mA. It functions reliably across an operating temperature range of -40 °C to +85 °C.

Feature Summary

• Integrated active undershoot protection circuitry prevents false switching during signal transitions below ground potential.
• Level shifting capability allows control inputs to interface with different logic voltage domains while maintaining signal integrity.
• Supports partial power-down mode to isolate the device and prevent reverse current flow when the supply is off.

Applications

• High-speed data bus switching in portable electronic devices
• Signal routing between components operating at different voltage levels
• Protecting sensitive digital interfaces from transient voltage undershoot

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and manufacturing origin through the manufacturer's product change notifications. Ensure the ordering part number matches the required lead time and availability constraints for your production schedule.

Selection Notes

Select this component when designing systems requiring robust protection against negative voltage transients on high-speed buses. The integrated level shifting simplifies interfacing between 3.3 V or 5 V control logic and 5 V data lines. Consider the low on-resistance and fast propagation delay for applications demanding minimal signal distortion and timing skew.

Part Context

This device belongs to the SN74CBT series of bus switches, designed for low-voltage and bi-directional translating applications. It utilizes CMOS technology to achieve low power consumption and high noise immunity. The CBTD variant specifically adds undershoot protection features not present in standard CBT counterparts, enhancing reliability in noisy environments.

Replacement Considerations

SN74CBTD3306CDR is available as a reel-packaged alternative with identical electrical characteristics and pinout compatibility.