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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SN74CBTD3306CDR is a dual FET bus switch from Texas Instruments featuring level shifting and -2 V undershoot protection. It operates within a supply voltage range of 4.5 V to 5.5 V and supports data I/O levels from 0 V to 5.5 V. The device contains two independent 1:1 switches in an 8-pin SOIC package. Key electrical parameters include a maximum on-resistance of 35 Ω, a propagation delay of 0.25 ns at 5 V with 50 pF load, and output currents of ±128 mA. It functions reliably across an operating temperature range of -40 °C to +85 °C.
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets required moisture sensitivity levels for your assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when designing systems requiring low on-resistance and fast switching speeds within a 5 V logic environment. Ensure the application demands undershoot protection capabilities and partial power-down functionality. Verify that the 8-pin SOIC footprint aligns with the PCB layout constraints and thermal management requirements of the target design.
This device belongs to the Texas Instruments CBT series of bus switches, designed for high-performance digital signal routing. It utilizes advanced CMOS technology to achieve low power consumption while maintaining signal integrity. The series is widely used in applications requiring efficient bus management and voltage level adaptation in compact electronic systems.
SN74CBTD3306DRE4 and SN74CBTD3306DRG4 are confirmed equivalent variants offering identical electrical characteristics and pin configurations.