SN74V263-10GGM

Overview

The SN74V263-10GGM is a 3.3-V CMOS first-in, first-out (FIFO) memory with an organization of 8192 × 18 or 16384 × 9. It operates at frequencies up to 166 MHz with a 6-ns read/write cycle time. The device features user-selectable input and output bus sizing for ×9 or ×18 configurations. It supports big-endian/little-endian byte representation and includes 5-V tolerant inputs. Key functional modes include First-Word Fall-Through (FWFT) and standard timing, zero-latency retransmit, and programmable almost-empty/full flags.

Feature Summary

• Supports flexible bus matching with selectable ×9 or ×18 data flow on both input and output ports.
• Provides independent read and write clocks allowing simultaneous operations without frequency restrictions.
• Features programmable flag offsets that can be configured via serial or parallel methods during operation.
• Includes zero-latency retransmit capability to reread data from the FIFO start location.

Applications

• Buffering large amounts of data in network and telecommunications systems
• Matching buses of unequal sizes in video and data communications
• Glueless interface connections with Texas Instruments C6x DSPs

Procurement Notes

Verify the specific ordering suffix matches the required package type, as the SN74V263 family is available in multiple packages including TQFP and BGA. Confirm the voltage level requirements align with the 3.3-V CMOS specification. Ensure the selected variant supports the necessary bus width configuration for your application design.

Selection Notes

Select this component when deep memory depth and high-speed operation are required for buffering applications. Consider the SN74V263 for designs needing independent clock domains and flexible bus width adaptation between peripherals. Evaluate the need for programmable flags and retransmit functions before choosing over simpler FIFO architectures.

Part Context

The SN74V263 belongs to a family of high-speed CMOS FIFO memories that also includes the SN74V273, SN74V283, and SN74V293. These devices share similar operational characteristics but differ in memory depth and organization. The SN74V263 specifically offers the smallest depth in this series, suitable for applications requiring moderate buffering capacity.

Replacement Considerations

Direct substitutes within the same family include the SN74V273, SN74V283, and SN74V293, which offer larger memory depths. Verify pin compatibility and electrical specifications when considering these alternatives for existing designs.