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The SN74V263 is a high-speed, deep CMOS first-in, first-out (FIFO) memory fabricated using submicron technology. It supports user-selectable memory organizations of 8192 × 18 or 16384 × 9 bits. The device operates at frequencies up to 166 MHz with a 6-ns read/write cycle time. It features independent read and write clocks, allowing simultaneous operations. Bus sizing is configurable for ×9 or ×18 data widths on both input and output ports. The component includes programmable flags, big-endian/little-endian selection, and retransmit capabilities.
Verify the specific package variant against the ordering information in the datasheet. Confirm that the GGM suffix corresponds to the required physical footprint and pinout configuration for your design. Ensure compatibility with the 3.3-V supply voltage requirements specified for this logic family.
Select this component when deep memory depth combined with high-speed operation is required. Consider the SN74V263 if independent clock domains for read and write operations are necessary. Evaluate the need for programmable flag offsets and retransmit functions before choosing between this model and other members of the V26x family.
This part belongs to the SN74V26x series of high-performance FIFO memories. The series includes variants with different depths such as the SN74V273, SN74V283, and SN74V293. All share similar interface characteristics but differ in storage capacity and addressable word counts.
Direct substitutes within the same family include SN74V273, SN74V283, and SN74V293. These parts offer identical functionality but provide increased memory depths ranging from 16384 to 65536 words. Verify pin compatibility and electrical specifications before substitution.