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The SN74V263 is a high-speed, deep first-in, first-out (FIFO) memory fabricated using 3.3-V CMOS technology. It provides an 8192 × 18 or 16384 × 9 data organization with independent read and write clocks. The device features user-selectable input and output bus sizing for flexible data flow matching. It supports big-endian and little-endian byte representations and includes programmable almost-empty and almost-full flags. The component operates at frequencies up to 166 MHz with a 6-ns read/write cycle time.
Verify the specific package type against the datasheet, as the SN74V263 is available in 80-pin TQFP and 100-pin BGA configurations. Confirm that the ordering suffix matches the required physical footprint for your PCB layout. Ensure the voltage requirements align with your system's 3.3-V logic levels before procurement.
Select this component when deep memory depth and high-speed operation are required for buffering large data streams. Consider the SN74V263 if your design needs flexible bus matching between different data widths. Evaluate the need for programmable flag offsets and retransmit capabilities when designing complex data handling architectures.
This part belongs to the SN74V26x family of high-performance FIFO memories from Texas Instruments. The family includes variants with varying memory depths, such as the SN74V273, SN74V283, and SN74V293. These devices share similar functional characteristics but differ in storage capacity to suit various application requirements.
Check for SN74V273, SN74V283, or SN74V293 if deeper memory is needed. Verify pin compatibility and electrical specifications before substituting with other FIFO families. Ensure the replacement supports the same 3.3-V operating voltage and package constraints.