SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SN74V263 is a high-speed, deep first-in, first-out (FIFO) memory fabricated using 3.3-V CMOS technology. It supports user-selectable memory organizations of 8192 × 18 or 16384 × 9. The device operates at frequencies up to 166 MHz with a 6-ns read/write cycle time. It features independent read and write clocks, allowing simultaneous operations. Bus sizing is configurable for ×9 or ×18 data flow on both input and output ports. The component includes programmable flags, selectable timing modes, and big-endian/little-endian byte representation options.
Verify the specific package variant against the datasheet pinout diagrams. Confirm that the GGM suffix corresponds to the 100-pin Ball Grid Array (BGA) configuration. Ensure compatibility with 3.3-V logic levels and check for any specific master reset requirements during system initialization.
Select this component when deep memory depth and high-speed operation are required. Consider the SN74V263 for applications needing asymmetric bus width conversion between 9-bit and 18-bit interfaces. Evaluate the need for programmable flag offsets and retransmit capabilities before choosing over simpler FIFO architectures.
This part belongs to the SN74V26x family of high-performance submicron CMOS FIFO memories. The family includes variants with different depths such as the SN74V273, SN74V283, and SN74V293. All members share similar functional characteristics but differ in storage capacity and organization options.
SN74V273: Offers 16384 × 18 or 32768 × 9 organization. SN74V283: Provides 32768 × 18 or 65536 × 9 organization. SN74V293: Supports 65536 × 18 or 131072 × 9 organization. Verify pin compatibility and depth requirements when substituting.