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The SN74V263 is a high-speed, deep CMOS first-in, first-out (FIFO) memory with an 8192 × 18 or 16384 × 9 organization. It operates at frequencies up to 166 MHz with a 6-ns read/write cycle time. The device features user-selectable input and output bus sizing for flexible data flow matching. It supports big-endian/little-endian byte representation and includes programmable almost-empty and almost-full flags. Independent read and write clocks allow simultaneous operations.
Verify the specific package type against the ordering suffix PZA, which corresponds to the 100-pin Ball Grid Array (BGA). Confirm that the required memory organization matches the SN74V263 specifications of 8192 × 18 or 16384 × 9. Ensure the design supports the necessary control signals for master reset and flag programming as documented in the datasheet.
Select this component when deep memory depth and high-speed operation are required. It is suitable for interfacing with DSPs via glueless connections. Consider the available bus configurations if width mismatching between input and output ports is needed. Verify that the 3.3-V supply voltage aligns with the system requirements.
This part belongs to the SN74V2xx family of high-speed CMOS FIFO memories from Texas Instruments. These devices are designed for high-performance applications requiring significant data buffering capabilities. The family includes variants with different memory depths to accommodate various system constraints.
SN74V273 offers 16384 × 18 or 32768 × 9 organization. SN74V283 provides 32768 × 18 or 65536 × 9 organization. SN74V293 delivers 65536 × 18 or 131072 × 9 organization.