SN74V273-10GGM

Overview

The SN74V273-10GGM is a 3.3-V CMOS first-in, first-out (FIFO) memory with a capacity of 16384 × 18 bits. It operates at frequencies up to 166 MHz with a 6-ns read/write cycle time. The device features user-selectable input and output bus sizing for ×9 or ×18 configurations. It supports big-endian/little-endian byte representation and includes 5-V tolerant inputs. Key functional attributes include fixed low first-word latency, zero-latency retransmit capability, and programmable almost-empty and almost-full flags.

Feature Summary

• Supports flexible bus matching with selectable ×9 or ×18 data flow on both input and output ports.
• Provides independent read and write clocks allowing simultaneous reading and writing operations.
• Includes programmable flag offsets that can be configured via serial or parallel methods.

Applications

• Network buffering applications
• Video signal processing systems
• Telecommunications data handling
• Data communications interfaces

Procurement Notes

Verify the specific suffix '10GGM' against official Texas Instruments documentation to confirm package type and availability. Ensure the component matches the SN74V273 family specifications provided in the datasheet SCAS669D. Confirm RoHS compliance status through manufacturer records before procurement.

Selection Notes

Select this component when deep FIFO memory depth is required alongside high-speed operation. Consider the SN74V273 for applications needing flexible bus width matching between unequal data paths. Evaluate the need for independent clock domains and programmable flag thresholds during system design.

Part Context

This part belongs to the SN74V263, SN74V273, SN74V283, and SN74V293 family of high-speed CMOS FIFO memories. These devices are fabricated using submicron CMOS technology and are designed for glueless interfacing with DSPs. They offer expandability in both depth and width for complex data buffering requirements.

Replacement Considerations

SN74V273