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The SN74V293 is a 65536 × 18, 3.3-V CMOS first-in, first-out memory fabricated using high-performance submicron technology. It supports 166-MHz operation with a 6-ns read/write cycle time. The device features user-selectable input and output port bus sizing for flexible data flow matching. It includes big-endian/little-endian selectable byte representation and 5-V tolerant inputs. The FIFO offers fixed low first-word latency and zero-latency retransmit capabilities.
Verify the specific package type against project requirements, as this component family is available in TQFP and BGA configurations. Confirm that the design accommodates the 3.3-V supply voltage and 5-V tolerant input specifications. Ensure the selected variant matches the required memory organization depth for the intended application scope.
Select this model when deep memory capacity of 65536 words is required. Choose based on the need for independent clock domains and flexible bus width configuration between ports. Consider the FWFT versus standard timing mode requirements for first-word latency constraints. Evaluate the necessity for programmable flag offsets to manage buffer thresholds effectively.
This component belongs to the SN74V2xx family of high-speed CMOS FIFO memories. The family includes variants with different depths such as 8192, 16384, and 32768 words. All members share similar control logic and pinout structures while differing primarily in internal RAM array size and addressable word count.
SN74V263 (8192 x 18)
The input and output bus widths are set during master reset by the states of the IW and OW pins, allowing combinations of 9-bit or 18-bit ports.
In FWFT mode, the first word appears automatically after three RCLK edges without requiring REN. In standard mode, every word requires an explicit read enable signal.