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The SN74V3640 is a 1024 × 36 bit synchronous first-in, first-out (FIFO) memory fabricated using high-performance submicron CMOS technology. It operates at frequencies up to 166 MHz with a 6-ns read/write cycle time and supports independent read and write clocks. The device features user-selectable bus sizing for input and output ports in widths of 36, 18, or 9 bits. It includes programmable almost-empty and almost-full flags, selectable standard or first-word fall-through timing modes, and big-endian/little-endian byte representation options.
Verify that the specific part number matches the required memory depth of 1024 words by 36 bits. Confirm the package type is 128-pin Thin Quad Flat Pack (TQFP). Ensure the operating temperature range meets the application requirements of 0°C to 70°C. Check datasheet specifications for voltage levels and timing constraints before integration.
Select this component when deep memory storage combined with high-speed operation is required. Choose this model over other variants in the family if the specific 1024-word depth is necessary. Consider the bus-matching capabilities if interfacing between systems with different data path widths. Verify clock independence requirements and flag programming needs against the device's flexible configuration options.
This device belongs to the SN74V36xx series of 3.3-V CMOS FIFO memories. Other members include the SN74V3650 through SN74V3690, which offer increasing depths from 2048 to 32768 words while maintaining identical interface and functional characteristics. All devices share the same 128-pin TQFP package and core architecture.
Direct substitutes within the same family include SN74V3650, SN74V3660, SN74V3670, SN74V3680, and SN74V3690. These parts share identical pinouts and functionality but differ in memory depth. Ensure the system design accommodates the alternative depth or utilizes unused address lines appropriately.