SN74V3640-6PEU

Overview

The SN74V3640-6PEU is a 1024 × 36-bit synchronous FIFO memory fabricated using high-performance submicron CMOS technology. It operates at frequencies up to 166 MHz with a 6-ns read/write cycle time and supports independent read and write clocks. The device features user-selectable bus sizing for input and output ports, configurable big-endian or little-endian byte representation, and programmable almost-empty and almost-full flags. It is available in a 128-pin LQFP package.

Feature Summary

• Supports flexible bus matching with selectable input and output widths of 36, 18, or 9 bits.
• Features zero-latency retransmit capability allowing data rereading from the first memory location.
• Includes programmable almost-empty and almost-full flags with selectable asynchronous or synchronous timing modes.
• Offers two operational timing modes: standard mode and first-word fall-through (FWFT) mode.

Applications

• Network buffering applications requiring large data storage capacity
• Video signal processing systems needing bus size adaptation
• Telecommunications equipment utilizing unequal bus interfaces
• Data communications infrastructure requiring high-speed synchronization

Procurement Notes

Verify that the specific ordering suffix matches the required package type and temperature range. Confirm that the component meets RoHS compliance standards as specified in the manufacturer's production data. Ensure that the supply source provides valid documentation supporting the authenticity of the Texas Instruments product before finalizing acquisition.

Selection Notes

Select this component when a deep, high-speed synchronous FIFO is required for buffering data between asynchronous domains. Consider the SN74V3640 specifically when a 1024 × 36 bit organization is necessary. Evaluate the need for flexible bus matching capabilities and programmable flag thresholds to determine if this device aligns with system interface requirements.

Part Context

This part belongs to the SN74V36x0 series of 3.3-V CMOS first-in, first-out memories manufactured by Texas Instruments. The series includes variants with different memory depths, ranging from 1024 to 32768 words, all maintaining a 36-bit word width. These devices are designed for high-density applications requiring significant buffering capabilities within compact surface-mount packages.

Replacement Considerations

Public confirmed substitute part numbers include SN74V3650, SN74V3660, SN74V3670, SN74V3680, and SN74V3690. These alternatives share identical pinouts and functional characteristics but offer increased memory depths. Verify that the alternative depth meets the specific application requirements before substitution.