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The SN74V3660-7PEU is a 3.3-V CMOS synchronous FIFO memory with a 4096 × 36 bit organization, providing 147,456 bits of storage capacity. It supports 166-MHz operation with a 6-ns read/write cycle time and features independent read and write clocks. The device allows user-selectable bus sizing for input and output ports (×36, ×18, or ×9) and offers big-endian/little-endian byte representation options.
Verify the specific ordering suffix matches the required package type and temperature range. Confirm that the revision level aligns with current production data standards. Ensure compatibility with existing board layouts regarding the 128-pin TQFP footprint. Check for any specific supply chain restrictions or end-of-life notices associated with this component series.
Select this component when a deep memory depth of 4096 words is required alongside high-speed 166-MHz performance. Choose this part if independent read and write clocks are necessary for asynchronous system designs. Consider this device for applications demanding configurable bus widths to match varying data path requirements without external logic.
This component belongs to the SN74V36xx family of high-speed CMOS FIFO memories manufactured by Texas Instruments. The family includes variants with different memory depths ranging from 1024 to 32768 words, all sharing similar functional characteristics and pinouts for easy scalability within system designs.
SN74V3650-7PEU: Offers smaller 2048 x 36 depth. SN74V3670-7PEU: Provides larger 8192 x 36 depth. SN74V3680-7PEU: Features 16384 x 36 depth. All share identical pinouts and functionality.