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The SN75468DR is a Texas Instruments discrete semiconductor component classified as a dual bipolar (BJT) transistor array. It integrates seven NPN Darlington pairs within a single surface-mount package, specifically the 16-SOIC housing with a width of 5.30mm. The device supports a maximum collector-emitter breakdown voltage of 100V and a continuous collector current of 500mA per channel. It features a junction temperature rating of 150°C and includes built-in clamping diodes across each pair to suppress inductive kickback from connected loads. The unit is compliant with RoHS3 standards and holds AEC-Q100 automotive qualification.
Verify the specific suffix 'DR' corresponds to the standard tape-and-reel packaging configuration when sourcing. Confirm that the required operating environment meets the specified thermal and voltage ratings. Ensure compatibility with the 16-SOIC footprint during PCB layout. Check for any recent Product Change Notifications regarding assembly sites or material updates before finalizing procurement plans.
Select this component when a compact solution for multiple high-side or low-side switches is required. The integrated Darlington configuration simplifies drive circuitry by providing high current gain. Consider the 100V rating for moderate voltage applications. Verify that the 500mA per-channel limit accommodates the peak current demands of the intended load without exceeding thermal constraints.
This part belongs to the SN75468/69 series of high-voltage Darlington arrays manufactured by Texas Instruments. The 'SN' prefix denotes commercial grade devices, while the '75468' identifier specifies the seven-pair configuration. It serves as a solid-state alternative to mechanical relays in space-constrained designs requiring isolated switching capabilities.
The ULN2003D1013TR from STMicroelectronics is listed as a similar alternative. Note that pinouts and electrical characteristics may differ; verify functional equivalence before substitution.