SPB42N03S2L-13

Single FETs, MOSFETs Overview

The SPB42N03S2L-13 is an N-channel enhancement mode OptiMOS power transistor manufactured by Infineon Technologies. It features a P-TO263-3-2 (D²Pak) surface-mount package with a drain-source voltage rating of 30 V and a continuous drain current capacity of 42 A at case temperatures up to 100 °C. The device exhibits a maximum on-state resistance of 12.9 mΩ at VGS=10 V and supports a pulsed drain current of 248 A. It operates within a junction temperature range of -55 °C to +175 °C, includes avalanche and dv/dt ratings, and provides superior thermal resistance for high-power switching applications.

Single FETs, MOSFETs Feature Summary

• OptiMOS technology providing excellent gate charge and on-resistance figure of merit
• Logic level operation suitable for direct drive from standard logic interfaces
• Avalanche rated capability for handling inductive load energy
• High dv/dt rating ensuring robust performance during fast switching transitions

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power supply output stages
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4035 against procurement requirements to ensure correct package variant. Confirm that the component meets all necessary environmental standards and quality grades required for the target application before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required in a surface-mount D²Pak package. Consider its thermal characteristics and on-resistance values relative to the expected operating current and ambient conditions to ensure adequate heat dissipation without excessive cooling infrastructure.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power transistors designed for efficiency and reliability. It shares electrical specifications with the through-hole SPP42N03S2L-13 and the leaded SPI42N03S2L-13 variants, differing primarily in the physical mounting configuration and thermal interface properties provided by the P-TO263-3-2 package.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements include the SPP42N03S2L-13 and SPI42N03S2L-13, which share identical electrical parameters but utilize different packages. Verify thermal management requirements when substituting between package types.

Single FETs, MOSFETs FAQ

Is the SPB42N03S2L-13 capable of handling avalanche energy?

Yes, the datasheet specifies that the device is avalanche rated, supporting single pulse avalanche energy of 110 mJ under defined test conditions.

What is the maximum reverse diode dv/dt rating?

The internal body diode is rated for a dv/dt of 6 kV/µs when conducting 42 A with a specified rate of current rise.