ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
SPB80N06S2-H5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 80A TO263-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPB80N06S2-H5
- Description：MOSFET N-CH 55V 80A TO263-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs：155 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for SPB80N06S2-H5
Single FETs, MOSFETs Overview
The SPB80N06S2-H5 is an N-channel OptiMOS power transistor manufactured by Infineon Technologies. It features a P-TO263-3-2 package and operates with a drain-source voltage of 55 V and a continuous drain current of 80 A at 25°C. The device has a maximum on-state resistance of 5.5 mΩ and supports a pulsed drain current of 320 A. It includes avalanche and dv/dt ratings, with a single pulse avalanche energy capability of 700 mJ. The component functions within a temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology providing enhanced performance for power switching applications
- Avalanche rated for robust operation under inductive load conditions
- dv/dt rated to withstand rapid voltage transitions during switching
- Enhancement mode N-channel configuration for standard drive compatibility
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the exact ordering code Q67060-S6053 against procurement requirements. Confirm that the P-TO263-3-2 package footprint matches the design layout. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a low on-resistance N-channel MOSFET is required for high-current applications. Consider the 55 V rating and 80 A continuous current capacity relative to system loads. Evaluate the thermal characteristics and package type for integration into existing PCB layouts requiring surface-mount assembly.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family of power transistors from Infineon Technologies. It utilizes silicon technology designed for efficient power switching. The specific model designation indicates its channel type, voltage class, and package variant within the broader product portfolio.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative OptiMOS devices with similar voltage and current ratings. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure any replacement meets the same avalanche and dv/dt rating requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
