SPP20N60C3HKSA1

Single FETs, MOSFETs Overview

The SPP20N60C3HKSA1 is a single N-channel CoolMOS C3 power MOSFET manufactured by Infineon Technologies. It features a 600V drain-source breakdown voltage and a continuous drain current of 20.7A at case temperature. The device exhibits a maximum on-resistance of 190 mOhms and a gate charge of 87 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 208W. The component utilizes a TO-220-3 through-hole package and employs silicon technology for high-efficiency switching applications.

Single FETs, MOSFETs Feature Summary

• Utilizes revolutionary CoolMOS C3 high-voltage technology for superior performance
• Features ultra-low gate charge to minimize switching and drive losses
• Periodic avalanche rated for enhanced reliability under stress conditions

Single FETs, MOSFETs Applications

• AC-DC power supplies
• Computer and computer peripheral equipment
• Communication and network systems
• Consumer electronics power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix HKSA1 against official Infineon documentation to confirm pinout, marking, and environmental compliance details. Confirm availability status as previous related models may carry NRND designations. Ensure thermal management solutions align with the 208W dissipation rating in the TO-220-3 package. Cross-reference datasheet revisions to guarantee parameter consistency for your specific design requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction and switching losses in high-voltage environments. The CoolMOS C3 technology offers improved efficiency compared to standard planar MOSFETs. Consider the TO-220-3 package for through-hole mounting constraints. Evaluate thermal resistance parameters relative to your heatsinking strategy to maintain junction temperatures within safe operating limits during peak load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS C3 family, representing an advanced generation of high-voltage power MOSFETs. The series is engineered to reduce energy consumption in power conversion systems. The SPP20N60C3HKSA1 variant specifically integrates the HKSA1 suffix indicating particular manufacturing or packaging attributes defined by Infineon for global distribution channels.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include SPP20N60C3XKSA1 and SPA20N60C3. Verify pin compatibility and thermal characteristics before substitution. Note that some variants may carry Not Recommended for New Designs (NRND) status.