SSM3H137TU,LF

$0.60

Description：MOSFET N-CH 34V 2A UFM
Series：U-MOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:70a14ba58571 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

SSM3H137TU,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 34V 2A UFM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3H137TU,LF

Description：MOSFET N-CH 34V 2A UFM
Series：U-MOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：34 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：1.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：119 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UFM
Package / Case：3-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for SSM3H137TU,LF

SSM3H137TU,LF

Single FETs, MOSFETs Overview

The SSM3H137TU,LF is a single N-channel MOSFET with an integrated active clamp Zener diode, designed for relay driver applications. It features a drain-source voltage rating of 34 V and a continuous drain current of 2 A at ambient temperature. The device dissipates up to 800 mW (Ta) and utilizes the UFM-3 surface mount package. Key electrical parameters include a maximum on-resistance of 0.24 Ω at 10 V gate drive and a forward transconductance minimum of 2.2 S.

Single FETs, MOSFETs Feature Summary

Integrates an active clamp Zener diode to protect against inductive load voltage spikes.
Optimized for driving electromagnetic relays with low on-resistance characteristics.
Utilizes Toshiba's U-MOSIV technology for efficient switching performance.

Single FETs, MOSFETs Applications

Electromagnetic relay drivers
Inductive load switching circuits
Automotive control modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix LF for lead-free compliance and TU for tape-and-reel packaging configuration. Confirm the UFM-3 package designation matches your PCB footprint requirements. Ensure the active clamp Zener integration aligns with your circuit protection strategy without external components. Cross-reference the manufacturer part number TA75S393 or similar series only if verifying family compatibility, not direct substitution.

Single FETs, MOSFETs Selection Notes

Select this component when a compact solution for relay driving is required that combines power switching and transient suppression. The 34 V rating suits 12 V nominal systems with surge margins. The 2 A current capability supports standard automotive and industrial relays. Consider the UFM-3 package size constraints during layout planning.

Single FETs, MOSFETs Part Context

This device belongs to Toshiba's discrete MOSFET portfolio, specifically engineered for high-density power switching. It leverages U-MOSIV technology to achieve low conduction losses. The integration of the clamp diode distinguishes it from standard discrete MOSFETs, simplifying bill-of-materials for inductive loads.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance if considering alternative manufacturers' N-channel MOSFETs with integrated clamps.