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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.18A US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：180mA, 100mA
- Rds On (Max) @ Id, Vgs：3Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.5pF @ 3V
- Power - Max：200mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The SSM6L35FU(TE85L,F) is a dual N-channel small signal MOSFET manufactured by Toshiba Semiconductor and Storage. It integrates two independent N-channel field-effect transistors within a compact SC-70-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) rating of 100 mA per channel. Key electrical parameters include a maximum on-resistance (Rds(on)) of 2 Ohms at a gate-source voltage of 4 V, and a gate-source threshold voltage (Vgs(th)) ranging from 0.9 V to 1.5 V. The component supports an operating temperature range from -55°C to +150°C with a power dissipation capability of 200 mW.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Low on-resistance characteristics suitable for efficient switching applications
- High thermal stability with extended operating temperature range
Applications
- Analog switching circuits
- High-speed digital switching applications
- Portable electronic devices requiring compact packaging
Procurement Notes
Verify the complete part number including the suffix TE85L,F to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the specific datasheet revision to validate electrical parameter tolerances against design requirements.
Selection Notes
Select this component when a dual N-channel topology is required in a minimal footprint. Ensure the 20 V voltage rating aligns with the system's supply rails. Verify that the 2 Ohm on-resistance meets the target current handling needs without excessive power loss. Consider the SC-70-6 package dimensions for PCB layout constraints.
Part Context
This component belongs to Toshiba's SSM6L series of small signal MOSFETs designed for high-density mounting. The series emphasizes low on-resistance and compact form factors for portable electronics. The TE85L suffix indicates a specific reel-based packaging format used for automated surface-mount assembly processes.
Replacement Considerations
Direct pin-compatible substitutes may exist within the same Toshiba SSM6L family, such as variants with different current or voltage ratings. Verify equivalent Rds(on), Vgs(th), and package dimensions before substitution. Consult official cross-reference lists for validated alternatives.
