SST201 SOT-23 3L ROHS

$4.24

Description：JFET N-CH 40V SOT23-3
Series：SST201

SKU:29619c5af9b9 Category: JFETs Brand: Linear Integrated Systems, Inc.

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 40V SOT23-3
Series：SST201
Mfr：Linear Integrated Systems, Inc.
Package：Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：200 µA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：300 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：4.5pF @ 15V
Resistance - RDS(On)：-
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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SST201 SOT-23 3L ROHS

Overview

The SST201 is a single N-channel JFET in an SOT-23-3L package. It features a gate-to-source breakdown voltage of -40V and a cutoff voltage range of -0.3V to -1.5V. The drain-to-source saturation current is typically 1.0mA at VDS=15V, with a maximum reverse gate current of -100pA. Forward transconductance is typically 0.5mS. Input capacitance is 4.5pF, and noise voltage is 4.0nV/√Hz. Continuous power dissipation is 350mW at +25°C.

Feature Summary

High gain performance suitable for low-level signal amplification
Very low input noise characteristics
High input impedance operation
Low cutoff voltage enabling excellent low-power supply functionality

Applications

High-gain, low-noise amplifiers
Low-current, low-voltage battery-powered amplifiers
Infrared detector amplifiers
Ultra-high input impedance pre-amplifiers

Procurement Notes

Verify the specific part number includes the correct package designation (SOT-23 3L) and RoHS compliance status when ordering. Confirm that the device meets the required electrical parameters for your application, particularly the gate-to-source cutoff voltage range and forward transconductance values. Ensure compatibility with automated assembly processes if tape-and-reel packaging is needed.

Selection Notes

Select this component for designs requiring high gain and low noise in surface-mount applications. Consider the low cutoff voltage for efficient operation with minimal power supplies. Evaluate the thermal requirements against the continuous power dissipation rating. Compare with other JFETs if higher saturation currents or different package types are necessary.

Part Context

This device belongs to the J/SST201/2/4 series of single N-channel JFETs. It serves as a direct replacement for older Siliconix equivalents. The SST variant specifically offers surface-mount capability via the SOT-23 package, while the J variant uses the TO-92 through-hole package. Both are available in tape-and-reel formats.

Replacement Considerations

The datasheet identifies the J/SST201/2/4 series as a low-cost direct replacement for Siliconix J/SST201/2/4 series devices. Verify pinout compatibility and electrical parameter overlaps before substitution.