SST39VF040-70-4C-NHE-T

Memory IC Overview

The SST39VF040-70-4C-NHE-T is a 4-Mbit (512K x 8) CMOS Multi-Purpose Flash memory manufactured using Microchip's SuperFlash technology. It operates on a single voltage supply of 2.7V to 3.6V and features an asynchronous parallel interface with latched address and data inputs. The device provides fast read access times of 70 ns, uniform 4-Kbyte sector erase capability, and byte program operations. It includes hardware and software data protection schemes, automatic write timing with internal Vpp generation, and end-of-write detection via Toggle Bit or Data# Polling.

Memory IC Feature Summary

• SuperFlash Technology: Utilizes split-gate cell design and thick-oxide tunneling injector for superior reliability and manufacturability compared to alternate approaches.
• Sector Erase Capability: Supports uniform 4-Kbyte sector erasing, allowing convenient and economical updating of program, configuration, or data memory.
• Data Protection: Incorporates both hardware noise/glitch protection and JEDEC-approved Software Data Protection schemes to prevent inadvertent writes.
• End-of-Write Detection: Provides Toggle Bit and Data# Polling methods to optimize system write cycle time and detect completion of Program or Erase operations.

Memory IC Applications

• Applications requiring economical updating of program, configuration, or data memory.
• System applications needing improved performance and reliability while lowering power consumption.
• Program, data, and configuration storage applications where flexibility and cost reduction are priorities.

Memory IC Procurement Notes

Verify the specific suffix 'NHE-T' against official documentation to confirm package type and tape-and-reel orientation. Ensure the operating voltage range matches the target system requirements, as this variant supports 2.7V to 3.6V. Confirm moisture sensitivity level and reflow soldering temperature limits if surface mount assembly is planned. Check for any recent Product Change Notices regarding packaging or material composition updates.

Memory IC Selection Notes

Select this component when a 4-Mbit capacity with 70 ns access time is required in a 32-lead PLCC package. It is suitable for systems operating within the commercial temperature range of 0°C to +70°C. Consider this part for designs needing low-power standby modes and robust data retention characteristics exceeding 100 years. Ensure the host controller supports the necessary command sequences for Software Data Protection during write operations.

Memory IC Part Context

This device belongs to the SST39SF/SST39VF series of Multi-Purpose Flash memories from Microchip Technology. It shares architectural similarities with the SST39LF series but differs in operating voltage, supporting lower voltage write operations. The SuperFlash technology distinguishes it from older EEPROM or Flash technologies by offering fixed erase and program times independent of cycle count.

Memory IC Replacement Considerations

SST39VF040-70-4I-NHE-T

Memory IC FAQ

How does the SST39VF040 indicate the completion of a Write operation?

Completion is indicated via two software methods: Toggle Bit (DQ6), which alternates between 0 and 1 during the operation, and Data# Polling (DQ7), which outputs the complement of true data until the operation finishes.

What is the minimum sector size for erasing data on this device?

The device supports uniform 4-Kbyte sector erasing, allowing for targeted erasure of specific memory blocks rather than requiring a full chip erase.

Is Software Data Protection enabled by default?

Yes, the devices are shipped with Software Data Protection permanently enabled to protect nonvolatile data from inadvertent writes during power-up or power-down.