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The SST509 is a silicon current regulating diode from the SST500 series, housed in an SOT-23 3L package. It provides a nominal forward current of 3.0 mA with a range of 2.4 to 3.6 mA. The device features a peak operating voltage of 50 V and a maximum reverse voltage of 0.8 V at 1 mA reverse current. Forward capacitance is typically 1.5 pF at 25 V. Dynamic impedance is nominally 0.3 MΩ, while knee impedance is 0.06 MΩ. The limiting voltage ranges from 1.7 V to 3.5 V. Continuous power dissipation is 350 mW, derating by 2.8 mW/°C above 25°C. Operating junction temperature spans -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's documentation to confirm compliance status and custom part availability. Ensure the component matches the standard SST509 specification without additional alphanumeric codes that may indicate variant configurations or packaging differences.
Select this component when a stable 3.0 mA current source is required in a compact surface-mount footprint. Consider the 50 V peak operating voltage limit and the 350 mW continuous power dissipation rating during thermal design. Verify that the dynamic impedance characteristics meet the circuit stability requirements.
The SST509 belongs to the SST500 series of current regulating diodes manufactured by Linear Integrated Systems. This series offers a wide current range from 0.19 mA to 5.6 mA across multiple part numbers. The SST509 specifically targets applications requiring approximately 3 mA regulation in a small SOT-23 package.
This component serves as a direct replacement for the Siliconix/Vishay SST502 series devices. Verify pinout compatibility and electrical parameter alignment before substitution in existing designs.
The typical dynamic impedance (Zd) of the SST509 is 0.3 MΩ.
The SST509 replaces the Siliconix/Vishay SST502 series but offers different current regulation characteristics, specifically a higher nominal forward current of 3.0 mA compared to the SST502's 0.43 mA.
The maximum reverse voltage is 0.8 V when measured at a reverse current of 1 mA.