SSU1N60BTU

Single FETs, MOSFETs Overview

The SSU1N60BTU is an N-channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes planar DMOS technology to achieve low on-state resistance and superior switching performance. The device is rated for a drain-source voltage of 600 V and supports a continuous drain current of 1.8 A. Key electrical parameters include a maximum on-resistance of 5 Ω at VGS = 10 V, a typical gate charge of 12 nC at VGS = 10 V, and a maximum input capacitance of 1300 pF at VDS = 25 V. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Planar DMOS technology minimizes on-state resistance and enhances switching speed.
• High avalanche energy capability with 100% avalanche testing.
• Improved dv/dt capability for robust commutation performance.

Single FETs, MOSFETs Applications

• High efficiency switch mode power supplies
• General purpose high voltage switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TU' against official datasheets to confirm tape-and-reel packaging requirements. Confirm RoHS compliance status as per the latest manufacturer documentation. Ensure the component matches the exact pinout and thermal characteristics required for the target PCB layout before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600 V blocking voltage with moderate current handling in a compact surface-mount package. Compare gate charge and on-resistance values against alternative SMD packages like DPAK or TO-252 if higher current capacity is needed. Evaluate thermal dissipation capabilities relative to the expected duty cycle and ambient operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the family of 600 V N-channel MOSFETs produced using Fairchild's proprietary planar DMOS process. It is designed to offer improved performance over standard discrete devices, specifically targeting applications where switching losses and conduction losses must be minimized. The device is often used in conjunction with other components in power conversion circuits.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include SSR2N60BTM or similar 600 V N-channel MOSFETs in the TO-252 (DPAK) package. Verify that replacement parts meet the same 600 V rating, current handling, and thermal specifications. Check for compatibility in gate drive requirements and package dimensions to ensure seamless integration into existing designs.