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Product Detailed Parameters
- Description：IC SWITCH SPDT X 4 7.5OHM 56QFN
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：7.5Ohm
- Channel-to-Channel Matching (ΔRon)：500mOhm
- Voltage - Supply, Single (V+)：3V ~ 3.6V
- Voltage - Supply, Dual (V±)：-
- Switch Time (Ton, Toff) (Max)：9ns, 8.5ns
- -3db Bandwidth：450MHz
- Charge Injection：-
- Channel Capacitance (CS(off), CD(off))：6pF
- Current - Leakage (IS(off)) (Max)：5µA
- Crosstalk：-45dB @ 250MHz
- Operating Temperature：-55°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：56-WFQFN Exposed Pad
- Supplier Device Package：56-QFN (11x5)
- Number of Circuits：4
- Grade：-
- Qualification：-
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Overview
The ST3DV520QTR is a high-bandwidth analog multiplexer switch manufactured by STMicroelectronics. It features four channels configured as a 4 x 2:1 multiplexer in a QFN EP package. The device operates on a single supply voltage ranging from 3 V to 3.6 V. Key electrical parameters include a maximum on-resistance of 7.5 Ohms, a bandwidth of 450 MHz, and a propagation delay of 0.25 ns. Switching performance is characterized by a maximum turn-on time of 9 ns and a maximum turn-off time of 8.5 ns. The component supports surface mount installation and functions within an operating temperature range of -40 °C to +85 °C.
Feature Summary
- High bandwidth signal transmission capability for analog applications
- Integrated bootstrap diode for simplified high-side driver powering
- Optimized for driving high-speed GaN power switches with fast startup
Applications
- Driving N-channel Enhancement Mode GaN transistors in power converters
- High-frequency switching circuits requiring low propagation delay
- Interfacing controllers with high-voltage half-bridge configurations
Procurement Notes
Verify the specific ordering suffix and package variant against the official STMicroelectronics datasheet before procurement. Confirm that the component meets the required industrial temperature range and voltage specifications for the target application. Check current availability status as product lifecycles may change.
Selection Notes
Select this component when a high-voltage half-bridge gate driver for GaN switches is required. Ensure the design accommodates the 600 V rail capability and the specific input voltage range of 3.3 V to 20 V. Consider the compact QFN package dimensions and thermal requirements for the intended PCB layout.
Part Context
This part belongs to the STDRIVEG series of gate drivers designed specifically for Gallium Nitride (GaN) power switches. It provides integrated protection features such as UVLO and overtemperature reporting. The series emphasizes high dV/dt immunity and fast switching speeds suitable for modern high-efficiency power electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative gate drivers for GaN applications.
