STB43N65M5

Single FETs, MOSFETs Overview

The STB43N65M5 is an automotive-grade N-channel Power MOSFET from the MDmesh M5 series, manufactured by STMicroelectronics. It features a D2PAK-3 (TO-263-3) surface-mount package and operates with a drain-source voltage of 650 V. The device supports a continuous drain current of 42 A and exhibits a typical on-resistance of 58 mΩ at 10 V gate drive. Key electrical parameters include a maximum gate-source voltage of ±20 V, a gate charge of 100 nC, and power dissipation capability of 250 W. It is qualified under AEC-Q101 standards for automotive reliability.

Single FETs, MOSFETs Feature Summary

• Automotive-grade qualification compliant with AEC-Q101 standards
• MDmesh M5 technology providing low on-resistance and high efficiency
• Robust avalanche testing ensuring reliable operation in hard switching applications

Single FETs, MOSFETs Applications

• High-power PFC topologies
• PWM converters in hard switching applications
• Automotive power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the exact packaging configuration, such as reel or cut tape, as these do not alter the component's function but affect handling. Ensure the procurement documentation explicitly references the AEC-Q101 qualification status required for automotive integration. Cross-reference the manufacturer datasheet to confirm the active status and availability of the specific lot code before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and low conduction losses in automotive environments. The 650 V rating provides sufficient headroom for standard automotive bus voltages. Consider the thermal performance within the TO-263 package relative to the system's heat dissipation capabilities. The 42 A current rating suits moderate to high-power single-phase applications where space constraints favor surface-mount solutions over through-hole alternatives.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh M5 family of super-junction high-voltage MOSFETs. These devices utilize a proprietary vertical process combined with horizontal layout structures to achieve superior power density. The series is optimized for applications demanding outstanding efficiencies and high dv/dt capability, distinguishing it from standard silicon-based MOSFETs in terms of RDS(on) area product.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include STB35N65M5 and STB42N65M5, which offer similar voltage ratings but different current and resistance characteristics. Verify pinout compatibility and thermal requirements when considering these alternatives.