STBP110CVDJ6F

Overview

The STBP110CVDJ6F is an overvoltage protection device designed for input voltages up to +28 V. It integrates a low RDS(on) N-channel MOSFET switch that disconnects the DC power supply during overvoltage events, protecting downstream components. The device complies with China MII Communications Standard YD/T 1591-2006 for specific overvoltage options. It features thermal shutdown, soft-start functionality, and microcontroller control via an enable input. Status information is provided through a fault indication output. The component is housed in a RoHS-compliant 8-lead TDFN package measuring 2 mm x 2 mm x 0.75 mm.

Feature Summary

• Integrated high-voltage N-channel MOSFET switch with low on-resistance
• Automatic disconnection of DC power supply during overvoltage conditions
• Built-in thermal shutdown mechanism to prevent overheating damage
• Microcontroller controllable with dedicated fault status output

Applications

• Input overvoltage protection for systems connected to OUT pin
• Compliance with China MII Communications Standard YD/T 1591-2006
• Protection against DC power supply failures

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability of alternative solutions or last-time buy options if production continuity is required. Ensure design compatibility with the 8-lead TDFN package dimensions and thermal pad requirements. Check for updated documentation regarding the specific CVDJ6F suffix variations.

Selection Notes

Select this device when input voltage protection up to 28 V is required for sensitive downstream electronics. Consider the integrated charge pump and low RDS(on) characteristics for efficient power handling. Evaluate the soft-start feature for managing inrush currents in applications requiring controlled power-up sequences. Verify thermal performance within the specified junction temperature limits.

Part Context

The STBP110 belongs to STMicroelectronics' family of overvoltage protection devices. It utilizes an internal N-channel MOSFET to isolate loads from faulty power sources. The device includes monitoring capabilities for both input voltage and internal temperature, ensuring robust protection in communication and industrial applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.