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The STBP110ETDJ6F is an integrated overvoltage protection device manufactured by STMicroelectronics. It incorporates a low RDS(on) N-channel MOSFET switch designed to safeguard downstream systems from input voltage anomalies up to +28 V. The component ensures compliance with specific telecommunications standards, such as China MII Communications Standard YD/T 1591-2006, by disconnecting the power supply during fault conditions. Key electrical characteristics include a maximum continuous current of 1.2 A and an internal MOSFET on-resistance of 170 mΩ. The device features thermal shutdown protection and soft-start functionality to manage inrush currents.
Verify that the ordering suffix ETDJ6F corresponds to the specified 8-lead TDFN package configuration. Confirm that the device meets the required environmental compliance standards, specifically RoHS. Ensure the selected variant supports the necessary enable input and fault indication functionalities for your specific circuit design requirements.
Select this component when designing circuits requiring integrated overvoltage protection for input voltages up to 28 V. Consider its 170 mΩ on-resistance and 1.2 A current rating for appropriate load handling. Evaluate the need for microcontroller integration and thermal management features inherent to this specific protection IC architecture.
This part belongs to STMicroelectronics' portfolio of specialized power management and protection devices. It is distinct from general-purpose MOSFETs like the STP110N8F6 or bipolar transistors like the TIP110. The STBP110 series focuses on intelligent protection rather than simple switching, offering integrated control logic and safety features within a compact surface-mount package.
Public confirmed substitute part numbers are not available in the provided documentation.