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The STC03DE170HV is a hybrid emitter switched bipolar transistor (ESBT) manufactured by STMicroelectronics. It integrates high voltage Bipolar and low voltage MOSFET technologies to deliver optimized performance in ESBT topology. The device features a collector-source voltage of 1700 V, a continuous collector current of 3 A, and an on-resistance of 0.33 Ω. It operates with a maximum junction temperature of 125 °C and utilizes a TO247-4L HV package.
Verify the specific ordering code matches the required packaging configuration. Confirm that the component is sourced from authorized channels to ensure authenticity. Check the revision history for any updates to electrical specifications or mechanical data prior to finalizing procurement orders.
Select this component when designing auxiliary power supplies for three-phase systems requiring high voltage isolation and fast switching speeds. Ensure the thermal management design accommodates the specified total dissipation at case temperatures below 25 °C. Verify that the gate drive circuitry aligns with the recommended base and gate voltage parameters.
This device belongs to the ESBT® family, which utilizes a hybrid architecture to merge the benefits of Bipolar and MOSFET technologies. Designed specifically for high-voltage applications, it offers improved efficiency and switching speed compared to traditional discrete solutions. The TO247-4L HV package provides robust mechanical stability and efficient heat dissipation for industrial environments.
STC03DE170HV
The absolute maximum collector-source voltage (VCS(SS)) is rated at 1700 V.
Yes, the STC03DE170HV is designed for very fast switching, capable of operating up to 150 kHz.
The typical collector-source on-resistance (RCS(ON)) is 0.33 Ω.