STC03DE170HV

STC03DE170HV

$3.63
  • Description:TRANS ESBT 1700V 3A TO247-4LHV
  • Series:ESBT®

SKU:47f37e3925ee Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS ESBT 1700V 3A TO247-4LHV
  • Series:ESBT®
  • Mfr:STMicroelectronics
  • Package:Tube
  • Transistor Type:NPN - Emitter Switched Bipolar
  • Applications:Gate Driver
  • Voltage - Rated:1700V (1.7kV)
  • Current Rating (Amps):3A
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-247-4
  • Supplier Device Package:TO-247-4L HV

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STC03DE170HV

Overview

The STC03DE170HV is a hybrid emitter switched bipolar transistor (ESBT) manufactured by STMicroelectronics. It integrates high voltage Bipolar and low voltage MOSFET technologies to deliver optimized performance in ESBT topology. The device features a collector-source voltage of 1700 V, a continuous collector current of 3 A, and an on-resistance of 0.33 Ω. It operates with a maximum junction temperature of 125 °C and utilizes a TO247-4L HV package.

Feature Summary

  • Hybrid structure combining dedicated high voltage Bipolar and low voltage MOSFET technologies for superior ESBT performance
  • Squared Reverse Biased Safe Operating Area (RBSOA) supporting up to 1700 V
  • Very fast switching capability reaching frequencies up to 150 kHz
  • Low equivalent on resistance and very low input capacitance driven by RG = 47 Ω

Applications

  • Auxiliary Switched Mode Power Supplies (SMPS) for three phase mains

Procurement Notes

Verify the specific ordering code matches the required packaging configuration. Confirm that the component is sourced from authorized channels to ensure authenticity. Check the revision history for any updates to electrical specifications or mechanical data prior to finalizing procurement orders.

Selection Notes

Select this component when designing auxiliary power supplies for three-phase systems requiring high voltage isolation and fast switching speeds. Ensure the thermal management design accommodates the specified total dissipation at case temperatures below 25 °C. Verify that the gate drive circuitry aligns with the recommended base and gate voltage parameters.

Part Context

This device belongs to the ESBT® family, which utilizes a hybrid architecture to merge the benefits of Bipolar and MOSFET technologies. Designed specifically for high-voltage applications, it offers improved efficiency and switching speed compared to traditional discrete solutions. The TO247-4L HV package provides robust mechanical stability and efficient heat dissipation for industrial environments.

Replacement Considerations

STC03DE170HV

FAQ

What is the maximum collector-source voltage rating?

The absolute maximum collector-source voltage (VCS(SS)) is rated at 1700 V.

Does the device support fast switching applications?

Yes, the STC03DE170HV is designed for very fast switching, capable of operating up to 150 kHz.

What is the typical on-resistance value?

The typical collector-source on-resistance (RCS(ON)) is 0.33 Ω.

STC03DE170HVSTC03DE170HV
$3.63
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