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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 400V 4A 8-DIP
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：4A
- Voltage - Collector Emitter Breakdown (Max)：400V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 1A, 4A
- Current - Collector Cutoff (Max)：250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：12 @ 2A, 5V
- Power - Max：3W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：8-DIP (0.300", 7.62mm)
- Supplier Device Package：8-DIP
- Grade：-
- Qualification：-
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Overview
The STD845DN40 is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in a dual-island DIP-8 package with separated terminals to provide a high degree of assembly flexibility. The device features low VCE(sat), simplified circuit design, reduced component count, and fast switching speed. Key electrical ratings include a collector-emitter voltage (VCEO) of 400 V, a collector current (IC) of 4 A, and a total dissipation (PTOT) of 3 W at Tamb = 25 °C for a single transistor.
Feature Summary
- Dual NPN high voltage transistors integrated into a single package
- Low collector-emitter saturation voltage for improved efficiency
- Fast switching speed suitable for high-frequency applications
- Dual-island DIP-8 package with separated terminals
Applications
- Compact fluorescent lamp (CFL) 220 V mains
- Electronic ballast for fluorescent lighting
Procurement Notes
Verify the obsolete status of this component before initiating any procurement process. Confirm availability through authorized distributors or secondary market suppliers. Ensure that any replacement components meet the required electrical specifications and thermal characteristics to maintain system integrity and safety standards.
Selection Notes
Select this component for applications requiring dual NPN high voltage transistors with fast switching capabilities. Consider the DIP-8 package constraints and thermal resistance values when designing the heat dissipation strategy. Verify compatibility with existing circuit designs and ensure that the operating conditions remain within the absolute maximum ratings specified in the datasheet.
Part Context
The STD845DN40 belongs to STMicroelectronics' portfolio of discrete power transistors. It is designed for use in lighting applications where high voltage and fast switching are critical. The dual-island DIP-8 package allows for flexible assembly and efficient heat dissipation, making it suitable for compact electronic ballasts and CFL drivers.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Users should consult STMicroelectronics directly or authorized distributors for potential replacements or alternative solutions that meet the same electrical and mechanical requirements.
FAQ
What is the maximum collector-emitter voltage for the STD845DN40?
The maximum collector-emitter voltage (VCEO) is 400 V.
What type of package does the STD845DN40 use?
It uses a dual-island DIP-8 package with separated terminals.
Is the STD845DN40 suitable for inductive load switching?
Yes, the datasheet includes test circuits and switching characteristics for inductive loads, indicating its suitability for such applications.
